comset semiconductors 1/4 2n6253 - 2n6254 - 2N6371 high power silicon npn transistors the 2n6253, 2n6254, and 2N6371 are silic on npn transistors intended for a wide variety of high-power applications. the c onstruction of these devices renders them highly resistant to second breakdown ov er a wide range of operating conditions. these devices differ in maximum ratings for voltage and power dissipation. all are supplied in jedec to-3 hermetic steel packages. absolute maximum ratings symbol ratings value unit 2n6253 45 2n6254 80 v ceo(sus) collector-emitter voltage 2N6371 40 v 2n6253 55 2n6254 100 v cbo collector-base voltage (*) 2N6371 50 v 2n6253 55 2n6254 85 v cer(sus) collector-emitter voltage r be =100 ? 2N6371 45 v 2n6253 55 2n6254 90 v cev(sus) collector-emitter voltage v be =-1.5v 2N6371 50 v 2n6253 5 2n6254 7 v ebo emitter-base voltage 2N6371 5 v i c collector current 2n6253 2n6254 2N6371 15 a i b base current 2n6253 2n6254 2N6371 7 a
comset semiconductors 2/4 2n6253 - 2n6254 - 2N6371 symbol ratings value unit 2n6253 115 2n6254 150 < 25c 2N6371 117 watts p tot power dissipation > 25c 2n6253 2n6254 2N6371 derate linearly to 200c t j junction temperature t s storage temperature 2n6253 2n6254 2N6371 -65 to +200 c thermal characteristics symbol ratings value unit 2n6253 1.5 2n6254 1.17 r thj-c thermal resistance, junction to case 2N6371 1.5 c/w electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit i c =3 a, i b =0.3 --1 i c =15 a, i b =5 2n6253 --4 i c =5 a, i b =0.5 --0.5 i c =15 a, i b =3 2n6254 --4 i c =8 a, i b =0.8 --1.5 v ce(sat) collector-emitter voltage (*) i c =16 a, i b =4 2N6371 --4 v v ce =25 v 2n6253 2N6371 --1.5 i ceo collector-emitter cutoff current v ce =60 v 2n6254 --1.0 ma v eb =-5 v 2n6253 2N6371 --10 i ebo emitter-base cutoff current v eb =-7 v 2n6254 0.5 ma
comset semiconductors 3/4 2n6253 - 2n6254 - 2N6371 symbol ratings test condition(s) min typ mx unit v ce =40 v v be =-1.5 v 2N6371 --10 v ce =50 v v be =-1.5 v 2n6253 --10 t c =150c v ce =100 v v be =1.5 v 2n6254 --5.0 ma v ce =45 v v be =-1.5 v 2N6371 --2.0 v ce =55 v v be =-1.5 v 2n6253 --2.0 i cex collector cutoff current t c =25c v ce =100 v v be =1.5 v 2n6254 --0.5 2n6253 45 - - 2n6254 80 - - v ceo(sus) collector-emitter sustaining voltage (*) i c =0.2 a, i b =0 a 2N6371 40 - - v 2n6253 55 - - 2n6254 85 - - v cer(sus) collector-emitter sustaining voltage (*) r be =100 ? i c =0.2 ma 2N6371 45 - - v 2n6253 55 - - 2n6254 90 - - v cev(sus) base-emitter voltage (*) i c =0.1 a, v be =-1.5 v 2N6371 50 - - v v ce =4 v, i c =3 a 2n6253 --1.7 v ce =2 v, i c =5 a 2n6254 --1.5 v be base-emitter voltage (*) v ce =4 v, i c =16 a 2N6371 --4 v v ce =4 v, i c =3 a 20 - 70 v ce =4 v, i c =15 a 2n6253 3- - v ce =2 v, i c =5 a 20 - 70 v ce =4 v, i c =15 a 2n6254 5- - v ce =4 v, i c =8 a 15 - 60 h fe static forward current transfer ratio (*) v ce =4 v, i c =16 a 2N6371 4- - - h fe small signal current gain v ce =4 v, i c =1 a, f=1 khz 2n6253 2n6254 2N6371 10 - - - 2n6253 --- 2n6254 --- f t transition frequency v ce =4 v, i c =1 a 2N6371 800 - - khz v ce =45 v 2n6253 2.55 - - 2n6254 1.87 - - i s/b second breakdown collector current tp=1s, non rep. v ce =40 v 2N6371 2.9 - - a (*) pulse width 300 s, duty cycle 2.0%
comset semiconductors 4/4 2n6253 - 2n6254 - 2N6371 mechanical data case to-3 dimensions mm inches a 25,45 1 b 38,8 1,52 c 30,09 1,184 d 17,11 0,67 e 9,78 0,38 g 11,09 0,43 h 8,33 0,32 l 1,62 0,06 m 19,43 0,76 n 1 0,04 p 4,08 0,16 pin 1 : base pin 2 : emitter case : collector information furnished is believed to be accurate and reliable. however, cs assumes no responsability for the consequences of use of such info rmation nor for errors that could appear. data are subject to change without notice
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